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TP0606N3-G-P002

TP0606N3-G-P002
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Dalies numeris
TP0606N3-G-P002
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET P-CH Enhancmnt Mode MOSFET
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
15 ns
Height
5.33 mm
Id - Continuous Drain Current
320 mA
Length
5.21 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-92-3
Packaging
Reel
Packaging
Cut Tape
Pd - Power Dissipation
1 W
Product
MOSFET Small Signal
Product Type
MOSFET
Rds On - Drain-Source Resistance
7 Ohms
Rise Time
15 ns
Technology
SI
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
20 ns
Typical Turn-On Delay Time
10 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
60 V
Vgs - Gate-Source Voltage
20 V
Width
4.19 mm

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