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RQ3E160ADTB

RQ3E160ADTB
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Dalies numeris
RQ3E160ADTB
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET Nch 30V 16A Middle Power MOSFET
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
45 ns
Id - Continuous Drain Current
16 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
HSMT-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
2 W
Product Type
MOSFET
Qg - Gate Charge
51 nC
Rds On - Drain-Source Resistance
3.5 mOhms
Rise Time
30 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
80 ns
Typical Turn-On Delay Time
9 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1 V

„Porduct“ kategorija

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Naujausios apžvalgos

Parašykite savo atgaivinimą
Teşekkürler
Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Everything as it is written in the description of the same deductible prodovtsu deserved 5
it is safe and sound all, thank you seller!
Daugiau

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