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RQ3E150MNTB1

RQ3E150MNTB1
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Dalies numeris
RQ3E150MNTB1
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET
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Specifikacijos

Kategorijos
MOSFET
Configuration
Single
Fall Time
40 ns
Forward Transconductance - Min
10 s
Id - Continuous Drain Current
15 A
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
HSMT-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
2 W
Product Type
MOSFET
Qg - Gate Charge
20 nC
Rds On - Drain-Source Resistance
4.8 mOhms
Rise Time
13 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
40 ns
Typical Turn-On Delay Time
11 ns
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V

„Porduct“ kategorija

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Naujausios apžvalgos

Parašykite savo atgaivinimą
Quick delivery. Secure packing. Excellent product. Thank you
High Quality driver, works excellent. It came to Moscow for 7 days.
Decent quality, not минвелл certainly, but enough decent
fast delivery
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Daugiau

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RQ3E150MNTB1 Naujienos

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