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RQ3E150GNTB

RQ3E150GNTB
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Dalies numeris
RQ3E150GNTB
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET 4.5V Drive Nch MOSFET
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Specifikacijos

Kategorijos
MOSFET
Configuration
Single
Fall Time
7.8 ns
Forward Transconductance - Min
13.5 S
Id - Continuous Drain Current
15 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
HSMT-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
2 W
Product Type
MOSFET
Qg - Gate Charge
15.3 nC
Rds On - Drain-Source Resistance
6.1 mOhms
Rise Time
5.8 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
34.4 ns
Typical Turn-On Delay Time
11.6 ns
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V

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Naujausios apžvalgos

Parašykite savo atgaivinimą
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Hello! Order received, very happy. Thank you very much!
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Everything is fine!
Daugiau

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RQ3E150GNTB Naujienos

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