- Dalies numeris
- RQ3E100MNTB1
- Kategorijos
- MOSFET
- RoHS
- Duomenų lapas
- apibūdinimas
- MOSFET
RQ3E100MNTB1
Vaizdai skirti tik nuorodoms
Specifikacijos
- Kategorijos
- MOSFET
- Configuration
- Single
- Fall Time
- 6 ns
- Id - Continuous Drain Current
- 10 A
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- HSMT-8
- Packaging
- Reel
- Packaging
- Cut Tape
- Packaging
- MouseReel
- Pd - Power Dissipation
- 2 W
- Product Type
- MOSFET
- Qg - Gate Charge
- 9.9 nC
- Rds On - Drain-Source Resistance
- 8.8 mOhms
- Rise Time
- 17 ns
- Technology
- SI
- Transistor Polarity
- N-Channel
- Transistor Type
- 1 N-Channel
- Typical Turn-Off Delay Time
- 31 ns
- Typical Turn-On Delay Time
- 7 ns
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Vgs - Gate-Source Voltage
- 20 V
- Vgs th - Gate-Source Threshold Voltage
- 2.5 V
„Porduct“ kategorija
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Naujausios apžvalgos
Quickly came to CET, all in one package. Look at the rules
Earl Sault
The goods are OK, thank you dealers.
CHARLES SANTOS
Great product. Arrived ahead of time. Thank you
Alexey Petrov
Seems well have not tested
Hazel Gooby
Packed medium, in transit could поврелиться. But since it's safe, work perfectly
Matt Hookway
Tau taip pat gali patikti
Žmonės žiūri RQ3E100MNTB1 tada nusipirko
RQ3E100MNTB1 Naujienos
03/14/2023
03/13/2023
03/13/2023
Susiję raktiniai žodžiai RQ3E
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- RQ3E100MNTB1 Techniniai duomenys
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