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HN1C03FU-B,LF

HN1C03FU-B,LF
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Dalies numeris
HN1C03FU-B,LF
Kategorijos
Bipolar Transistors - BJT
RoHS
Duomenų lapas
apibūdinimas
Bipolar Transistors - BJT NPN + NPN Ind. Transistor, VCEO=20V, IC=0.3A, hFE=350 to 1200 in SOT-26 (SM6) package
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Specifikacijos

Kategorijos
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
50 V
Collector- Emitter Voltage VCEO Max
20 V
Collector-Emitter Saturation Voltage
0.042 V
Configuration
Dual
DC Collector/Base Gain hfe Min
200
DC Current Gain hFE Max
1200
Emitter- Base Voltage VEBO
25 V
Gain Bandwidth Product fT
30 MHz
Maximum DC Collector Current
300 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
US-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
200 mW
Product Type
BJTs - Bipolar Transistors
Series
HN1C03
Technology
SI
Transistor Polarity
NPN

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Naujausios apžvalgos

Parašykite savo atgaivinimą
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Works. Find the price of this product is very good
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
Long Service and Russia!
Everything is fine!
Daugiau

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