Dalies numeris RQ3E100ATTB Kategorijos MOSFET RoHS Duomenų lapas RQ3E100ATTB apibūdinimas MOSFET PCH -30V -31A POWER
Kategorijos MOSFET Channel Mode Enhancement Configuration Single Fall Time 50 ns Id - Continuous Drain Current 31 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case HSMT-8 Packaging Reel Packaging Cut Tape Pd - Power Dissipation 17 W Product Type MOSFET Qg - Gate Charge 42 nC Rds On - Drain-Source Resistance 11.4 mOhms Rise Time 14 ns Technology SI Transistor Polarity P-Channel Transistor Type 1 P-Channel Typical Turn-Off Delay Time 85 ns Typical Turn-On Delay Time 12 ns Vds - Drain-Source Breakdown Voltage 30 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 1 V