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RQ3E120ATTB

RQ3E120ATTB
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Dalies numeris
RQ3E120ATTB
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET PCH -30V -12A MIDDLE POWER
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Specifikacijos

Kategorijos
MOSFET
Configuration
Single
Fall Time
95 ns
Height
0.85 mm
Id - Continuous Drain Current
12 A
Length
3 mm
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
HSMT-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
2 W
Product Type
MOSFET
Qg - Gate Charge
62 nC
Rds On - Drain-Source Resistance
61 mOhms
Rise Time
30 ns
Technology
SI
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
140 ns
Typical Turn-On Delay Time
20 ns
Vds - Drain-Source Breakdown Voltage
39 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V
Width
2.4 mm

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Naujausios apžvalgos

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Perfectly.
Goods came in two weeks. Well packed. Track number tracked
fast delivery
Fast shippng. Good quality. I recomend this seller.
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
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