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RQ3E120GNTB

RQ3E120GNTB
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Dalies numeris
RQ3E120GNTB
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET 4.5V Drive Nch MOSFET
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Specifikacijos

Kategorijos
MOSFET
Configuration
Single
Fall Time
3.4 ns
Forward Transconductance - Min
10 s
Id - Continuous Drain Current
12 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
HSMT-8
Packaging
Cut Tape
Packaging
MouseReel
Packaging
Reel
Part # Aliases
Pd - Power Dissipation
2 W
Product Type
MOSFET
Qg - Gate Charge
10 nC
Rds On - Drain-Source Resistance
8.8 mOhms
Rise Time
4.5 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
25.5 ns
Typical Turn-On Delay Time
9.6 ns
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V

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Naujausios apžvalgos

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My package arrived wet, not know where occurs this fact, but working all right
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Quickly came to CET, all in one package. Look at the rules
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Takes 8 days to Japan. Good!
Daugiau

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