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RQ3E180BNTB

RQ3E180BNTB
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Dalies numeris
RQ3E180BNTB
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET 4.5V Drive Nch MOSFET
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
79 ns
Id - Continuous Drain Current
39 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
HSMT-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
20 W
Product Type
MOSFET
Qg - Gate Charge
72 nC
Rds On - Drain-Source Resistance
2.8 mOhms
Rise Time
63 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
138 ns
Typical Turn-On Delay Time
14 ns
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1 V

„Porduct“ kategorija

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Naujausios apžvalgos

Parašykite savo atgaivinimą
Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!
Received, Fast shipping, not checked yet
packed pretty good, all is ok,-seller.
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
Daugiau

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