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RQ3E180AJTB

RQ3E180AJTB
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Dalies numeris
RQ3E180AJTB
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET Nch 30V 18A Middle Power MOSFET
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
160 ns
Id - Continuous Drain Current
18 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
HSMT-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
30 W
Product Type
MOSFET
Qg - Gate Charge
39 nC
Rds On - Drain-Source Resistance
3.5 mOhms
Rise Time
22 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
150 ns
Typical Turn-On Delay Time
28 ns
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
12 V
Vgs th - Gate-Source Threshold Voltage
500 mV

„Porduct“ kategorija

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Naujausios apžvalgos

Parašykite savo atgaivinimą
Teşekkürler
all exactly and work. радиолюбителя useful set to, thank you)
Everything is excellent! recommend this seller!
Shipping a little 1 weeks, normal packing, the procedure is complete.
The goods are OK, thank you dealers.
Daugiau

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