Dalies numeris RQ3E120BNTB Kategorijos MOSFET RoHS Duomenų lapas RQ3E120BNTB apibūdinimas MOSFET 4.5V Drive Nch MOSFET
Kategorijos MOSFET Configuration Single Fall Time 12 ns Id - Continuous Drain Current 12 A Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case HSMT-8 Packaging Cut Tape Packaging Reel Part # Aliases Pd - Power Dissipation 2 W Product Type MOSFET Qg - Gate Charge 29 nC Rds On - Drain-Source Resistance 6.6 mOhms Rise Time 30 ns Technology SI Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 46 ns Typical Turn-On Delay Time 9 ns Unit Weight Vds - Drain-Source Breakdown Voltage 30 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V