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RQ3E180GNTB

RQ3E180GNTB
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Dalies numeris
RQ3E180GNTB
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET 4.5V Drive Nch MOSFET
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Specifikacijos

Kategorijos
MOSFET
Configuration
Single
Fall Time
10.2 ns
Forward Transconductance - Min
17 S
Id - Continuous Drain Current
18 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
HSMT-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
2 W
Product Type
MOSFET
Qg - Gate Charge
22.4 nC
Rds On - Drain-Source Resistance
4.3 mOhms
Rise Time
6.9 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
56.8 ns
Typical Turn-On Delay Time
16.5 ns
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V

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Naujausios apžvalgos

Parašykite savo atgaivinimą
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
The goods are OK, thank you dealers.
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Works. Recommend
Long Service and Russia!
Daugiau

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RQ3E180GNTB Naujienos

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