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RQ3E100BNTB

RQ3E100BNTB
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Dalies numeris
RQ3E100BNTB
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET 4.5V Drive Nch MOSFET
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
10 ns
Id - Continuous Drain Current
13.5 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
HSMT-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
15 W
Product Type
MOSFET
Qg - Gate Charge
22 nC
Rds On - Drain-Source Resistance
7.7 mOhms
Rise Time
28 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
44 ns
Typical Turn-On Delay Time
10 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1 V

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Naujausios apžvalgos

Parašykite savo atgaivinimą
Thanks for your feedback!
goods very well received very good quality
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Takes 8 days to Japan. Good!
it is safe and sound all, thank you seller!
Daugiau

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