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RQ3E130BNTB

RQ3E130BNTB
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Dalies numeris
RQ3E130BNTB
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET 4.5V Drive Nch MOSFET
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
20 ns
Id - Continuous Drain Current
13 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
HSMT-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
2 W
Product Type
MOSFET
Qg - Gate Charge
36 nC
Rds On - Drain-Source Resistance
4.4 mOhms
Rise Time
34 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
64 ns
Typical Turn-On Delay Time
14 ns
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1 V

„Porduct“ kategorija

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Shipping a little 1 weeks, normal packing, the procedure is complete.
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
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RQ3E130BNTB Naujienos

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