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HN1B04FU-GR,LF

HN1B04FU-GR,LF
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Specifikacijos

Kategorijos
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
60 V, - 50 V
Collector- Emitter Voltage VCEO Max
50 V
Collector-Emitter Saturation Voltage
100 mV
Configuration
Dual
DC Collector/Base Gain hfe Min
120
DC Current Gain hFE Max
400
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
150 MHz, 120 MHz
Maximum DC Collector Current
150 mA
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Package / Case
SOT-363-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
200 mW
Product Type
BJTs - Bipolar Transistors
Series
HN1B04
Technology
SI
Transistor Polarity
NPN, PNP
Unit Weight

„Porduct“ kategorija

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Naujausios apžvalgos

Parašykite savo atgaivinimą
Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!
Thank You all fine, packed very well
Everything is excellent! recommend this seller!
Goods came in two weeks. Well packed. Track number tracked
Great product. Arrived ahead of time. Thank you
Daugiau

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