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HN1B04FU-Y,LF

HN1B04FU-Y,LF
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Specifikacijos

Kategorijos
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
60 V, - 50 V
Collector- Emitter Voltage VCEO Max
50 V
Collector-Emitter Saturation Voltage
0.1 V
Configuration
Dual
Continuous Collector Current
150 mA
DC Collector/Base Gain hfe Min
120
DC Current Gain hFE Max
400
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
150 MHz, 120 MHz
Maximum DC Collector Current
150 mA
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Package / Case
SOT-363-6
Packaging
Reel
Packaging
Cut Tape
Pd - Power Dissipation
200 mW
Product Type
BJTs - Bipolar Transistors
Series
HN1B04FU
Technology
SI
Transistor Polarity
NPN, PNP
Unit Weight

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Naujausios apžvalgos

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fast delivery
Fast shippng. Good quality. I recomend this seller.
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
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Parcel received shook cool all 10 pieces is not checked check unsubscribe
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