Dalies numeris TP0620N3-G Kategorijos MOSFET RoHS Duomenų lapas TP0620N3-G apibūdinimas MOSFET 200V 12Ohm
Kategorijos MOSFET Channel Mode Enhancement Configuration Single Fall Time 16 ns Height 5.33 mm Id - Continuous Drain Current 175 mA Length 5.21 mm Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-92-3 Packaging Bulk Pd - Power Dissipation 1 W Product Type MOSFET Rds On - Drain-Source Resistance 12 Ohms Rise Time 15 ns Technology SI Transistor Polarity P-Channel Transistor Type 1 P-Channel Type FET Typical Turn-Off Delay Time 20 ns Typical Turn-On Delay Time 10 ns Unit Weight Vds - Drain-Source Breakdown Voltage 200 V Vgs - Gate-Source Voltage 20 V Width 4.19 mm